[10p-N306-1~18] 17.2 Graphene

[10p-N306-4] Electron transport measurements in twisted bilayer graphene vdW tunnel device

〇Yuta Seo¹, Satoru Masubuchi¹, Rai Moriya¹, Kenji Watanabe², Takashi Taniguchi^1,2, Tomoki Machida^1,3 (1.IIS Univ. Toyo, 2.NIMS, 3.CREST-JST)

Keywords:graphene, twisted bilayer graphene, tunneling transport

We carried out electron transport measurements in twisted bilayer graphene (TBG)/h-BN/graphite (Gr) van der Waals (vdW) tunnel device in which a thin (1~2 nm) h-BN layer is sandwiched between TBG and Gr. We realize a device in which we can carry out tunneling transport measurements and in-plane transport measurements in a same device area. We observed in-plane transport reflecting the TBG's twist angle (θ~1.0°), and tunneling transport reflecting the TBG's density of states at the TBG's Fermi level and the Gr's Fermi level, and h-BN's impurity levels.