16:00 〜 16:15
▲ [10p-N403-10] Quantum Confinement and Carrier Transport in π-SnS Colloidal Quantum Dot Solids
キーワード：colloidal quantum dots, quantum confinement, optoelectronic devices
Significant progress in QD optoelectronic devices has been made mainly by Pb-based, Hg-based, and Cd-based binary compounds. Nevertheless, their high degree of toxicity is among the main concerns for practical applications. Sn-chalcogenides are among the possible environmentally benign alternatives which their bulks have demonstrated intriguing properties for energy devices. Nanostructuring these Sn-chalcogenides into QD form may create variations of their crystal structures and properties.
Here we demonstrate robust quantum confinement effects in small diameter π-type cubic SnS colloidal NCs and its exploitation for high-performing photodetector devices. The synthesized NCs exhibited a quantum confinement effect with strong variations of energy bandgap by size. Photodetector devices are fabricated using either a layer-by-layer ligand-exchanged spin-coating or assembly at a liquid/air interface to form a QD monolayer. Although their channels are made from only a single or few monolayer(s) of the π-SnS QD, the photodetectors demonstrate high responsivity comparable to the established QD photodetectors
Here we demonstrate robust quantum confinement effects in small diameter π-type cubic SnS colloidal NCs and its exploitation for high-performing photodetector devices. The synthesized NCs exhibited a quantum confinement effect with strong variations of energy bandgap by size. Photodetector devices are fabricated using either a layer-by-layer ligand-exchanged spin-coating or assembly at a liquid/air interface to form a QD monolayer. Although their channels are made from only a single or few monolayer(s) of the π-SnS QD, the photodetectors demonstrate high responsivity comparable to the established QD photodetectors