[10p-N405-1~11] CS.7 3.15 シリコンフォトニクス・集積フォトニクス、4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Photonicsのコードシェアセッション

▲ [10p-N405-5] Numerical analysis of graphene/III-V hybrid MOS optical modulator for high-efficiency and low-loss optical phase modulation

〇(M2)Tipat Piyapatarakul¹、Hanzhi Tang¹、Kasidit Toprasertpong¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.Univ. of Tokyo)

キーワード：graphene, III-V semiconductor, hybrid MOS

Implementing the hybrid MOS capacitor between single-layer graphene and n-InGaAsP, at mid-infrared wavelength, the absorption of graphenen is suppressed, allowing an optical phase modulator with high modulation efficiency and low insertion loss.