Study of Adsorption of H on Stepped SiC Surface during CVD Growth

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 10, 2021 1:00 PM - 5:00 PM S202 (Oral)

2:15 PM - 2:30 PM

〇Tomoya Kimura¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:silicon carbide, chemical vapor deposition, first-principles calculation