[10p-S302-1~18] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [10p-S302-14] Spin-orbit torque in structures with magnetization-compensated MnGa/Co₂MnSi

〇(M1)Takuya Hara¹、Kohey Jono¹、Michihiko Yamanouchi¹、Tetsuya Uemura¹ (1.IST Hokkaido Univ.)

キーワード：Spintronics, Spin-orbit torque, magnetization compensation

MnGa/Co₂MnSi (CMS) bilayer structures are attractive for the ferromagnetic electrodes of perpendicular magnetic tunnel junctions with high tunneling magnetoresistance because of the relatively large perpendicular magnetic anisotropy of MnGa and the half metallicity of CMS. In this study, We have systematically investigated the spin-orbit torque (SOT) induced in the structures composed of a Ta layer and the antiferromagnetically coupled MnGa/CMS bilayer with perpendicular magnetic anisotropy, where the compensation of magnetization is controlled by varying the CMS thicknesses t_CMS. The efficiency of generation of SOT takes the maximum around the compensation point, and it is ~6 times larger than that in the device with a single MnGa structure. These results indicate that the enhancement of the efficiency of SOT generation occurs around the magnetization-compensation point.