2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピン基盤技術・萌芽的デバイス技術

[10p-S302-1~18] 10.2 スピン基盤技術・萌芽的デバイス技術

2021年9月10日(金) 13:30 〜 18:30 S302 (口頭)

三輪 真嗣(東大)、森山 貴広(京大)、眞砂 卓史(福岡大)

17:15 〜 17:30

[10p-S302-14] Spin-orbit torque in structures with magnetization-compensated MnGa/Co2MnSi

〇(M1)Takuya Hara1、Kohey Jono1、Michihiko Yamanouchi1、Tetsuya Uemura1 (1.IST Hokkaido Univ.)

キーワード:Spintronics, Spin-orbit torque, magnetization compensation

MnGa/Co2MnSi (CMS) bilayer structures are attractive for the ferromagnetic electrodes of perpendicular magnetic tunnel junctions with high tunneling magnetoresistance because of the relatively large perpendicular magnetic anisotropy of MnGa and the half metallicity of CMS. In this study, We have systematically investigated the spin-orbit torque (SOT) induced in the structures composed of a Ta layer and the antiferromagnetically coupled MnGa/CMS bilayer with perpendicular magnetic anisotropy, where the compensation of magnetization is controlled by varying the CMS thicknesses tCMS. The efficiency of generation of SOT takes the maximum around the compensation point, and it is ~6 times larger than that in the device with a single MnGa structure. These results indicate that the enhancement of the efficiency of SOT generation occurs around the magnetization-compensation point.