[11a-N101-1~9] 15.4 III-V-group nitride crystals

[11a-N101-3] Dislocation structure induced by Vickers indentation on HVPE-GaN(0001) substrate

〇Yukari Ishikawa¹, Daisaku Yokoe¹, Yoshihiro Sugawara¹, Yongzhao Yao¹ (1.JFCC)

Keywords:GaN, Vickers indentation, dislocation

In order to establish the method for estimating the thickness of affected layer by wafer-making process, we performed Vickers indentation as the model experiment of indentation that is one of the processing. We found that the size of dislocation structure induced around indentation is proportional to the length of indentation diagonal. This result indicates that the thickness of affected layer can be estimated by scratch width.