[11a-N203-1~11] Interfacial Ion Dynamics for Solid State Ionics Devices

[11a-N203-7] Field-Effect Transistor using Electric Doble Layer Electrets

〇Shimpei Ono¹, Lieb Johanna², Sacepe Benjamin² (1.CRIEPI, 2.CNRS)

Keywords:Electric Double Layer, Electret

Electric field control of materials properties is one of the longstanding issues in solid-state science. In this project, we are going to employ a different route for carrier doping which relies on an electrochemical concept to control materials properties with an electric field. It is well known that when a voltage is applied to an electrolyte, a huge electric field of the order of 10 MV/cm is generated at the solid/liquid interface due to the formation of an electric double layer (EDL). Owing to this extremely high electric field, EDL gating has the unique capability to push the charge density accumulation as high as few 10¹⁵ cm^-2 that is well beyond the limitations of any solid gate dielectric. The purpose of this project is to explore this window of extreme electric fields using “electrets” which is a second generation EDL gating allowing for the control of novel states of semiconductor.