[11a-N302-1~11] 17.3 Layered materials

[11a-N302-3] Growth mechanism of InSe in metal organic chemical vapor deposition

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:III-VI semiconductor, metal organic chemical vapor deposition

InSe which is a two-dimensional layered semiconductor has high carrier mobility and bandgap ranging from infrared to visible light which make it a promising candidate for nano-optoelectronic devices. In this study, InSe was grown on c-plane sapphire substrate by metal organic chemical vapor deposition method. AFM observation for the sample under the conditions of different Se/In supply ratios clarifies the change in the domain shape and the flatness depending on the supply ratio.