[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

[11a-N305-1] [Young Scientist Presentation Award Speech] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Yuto Ando², Manato Deki⁴, Emi Kano², Shugo Nitta², Yoshio Honda², Nobuyuki Ikarashi², Atsushi Tanaka^2,3, Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

Keywords:ion implantation, GaN, Mg

The control of p-type conduction in GaN by Mg ion implantation is problematic due to the formation of various introduced defects. We have succeeded in reducing the number of introduced defects by high-temperature implantation. Furthermore, by lowering the implantation rate per unit time (beam current), we obtained results suggesting an increase in the Mg activation. In this experiment, ion implantation was performed with beam current doses of two different orders of magnitude, and the introduced defects in each sample were observed by scanning transmission electron microscopy (STEM).