[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

△ [11a-N305-7] Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:GaN, Deep level, p-GaN

We have investigated deep level traps in GaN where point defects are intentionally introduced. We have reported on nitrogen-displacement-related deep levels in n-type GaN. On the other hand, there are no reports on nitrogen-displacement-related hole traps in p-type GaN. In this study, we investigated the hole trap in p-type GaN formed by electron beam irradiation with the energy of 137 keV, where only nitrogen atoms are displaced. We observed hole trap EHa in the DLTS measurement of electron-beam irradiated p-GaN. Furthermore, EHa was varied by applying forward bias. The origin of EHa is likely to be V_N (3+/+) or N_I (2+/+), since the activation energy of EHa was close to the energy levels predicted by the first-principle calculation.