[11a-S201-1~6] Thin film / surface physics research trends and future prospects -The 50th anniversary of Thin film and surface physics division-

[11a-S201-6] Synchrotron analysis for quantum states of oxide heterostructures

〇Hiroshi Kumigashira¹ (1.IMRAM, Tohoku Univ.)

Keywords:Oxide heterostructure, Photoemission, Synchrotron radiation

The Mott transistor that controls the physical properties of strongly correlated oxides is one of the most promising candidates for Beyond CMOS devices. The key to realizing this is to precisely determine the novel quantum (charge, spin, and orbital) states that emerge in the region of a few nm at surfaces and interfaces. The photoemission spectroscopy using synchrotron radiation can provide the most direct information on these states. We will introduce the study of oxide heterostructures using high-brilliance synchrotron radiation and discuss the possibility of developing oxide devices based on synchrotron radiation analysis.