[11a-S302-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [11a-S302-1] Microscopic understanding of thermal annealing effect on the perpendicular magnetic anisotropy of Fe/MgO system

〇(P)Masanobu Shiga¹、Shoya Sakamoto¹、Takuya Tsujikawa¹、Ryoya Ando¹、Kenta Amemiya²、Shinji Miwa^1,3 (1.ISSP, U Tokyo、2.IMSS, KEK、3.TQSI, U Tokyo)

キーワード：Fe/MgO, perpendicular magnetic anisotropy, epitaxial strain

Fe(CoB)/oxide interfaces have been intensively investigated because they exhibit large perpendicular magnetic anisotropy (PMA) and a significant tunneling magnetoresistance. In several previous studies, thermal annealing was employed to enhance PMA energy; however, it is not evident how this process modulates the interfacial structure or how the changes in PMA energy arise. In this study, we have focused on the role of internal stress on PMA, and studied a fully epitaxial V/Fe/MgO multilayer with varying epitaxial strain in the V layer. The magnetization curves of the as-deposited and annealed samples were measured using the polar magneto-optical Kerr effect (MOKE). The magnetic field strength required to saturate the magnetization decreases after thermal annealing, indicating the enhancement of PMA. The influence of epitaxial strain on the PMA energy in the system will be discussed in the presentation.