[11a-S302-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [11a-S302-10] Current-induced domain wall motion in compensated ferrimagnetic TbFeCo films

〇Mio Ishibashi¹、Kay Yakushiji²、Masashi Kawaguchi¹、Arata Tsukamoto³、Satoru Nakatsuji¹、Masamitsu Hayashi¹ (1.Univ. of Tokyo、2.AIST、3.Nihon University)

キーワード：Domain wall motion, Ferrimagnets

Transition metal (TM) and rare earth (RE) ferrimagnets have TM and RE magnetic moments antiferromagnetically coupled, and their magnetization and angular momentum can be varied by changing the chemical composition. Recently, antiferromagnetic spin dynamics in TM-RE ferrimagnets near the magnetization compensation point (MCP) are attracting great interest owing to the ultrafast dynamics. In this study, we investigated current-induced domain wall motion in TM-RE ferrimagnets, TbFeCo, with various Tb composition x across the MCP.