[11a-S302-1~11] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [11a-S302-6] Quantitative characterization of current-induced spin-orbit torques in a perpendicularly magnetized GaMnAs single film

〇(M2)Chenda Wang¹、Miao Jiang¹、Shinobu Ohya^1,2,3、Masaaki Tanaka^1,2 (1.EEIS, Univ. of Tokyo、2.CSRN, Univ. of Tokyo、3.IEI,Univ. of Tokyo)

キーワード：spin-orbit torque magnetization switching, GaMnAs, perpendicular magnetic anisotropy

Magnetic random-access memory (MRAM) is a promising candidate for next-generation universal memory, which can realize higher storage capacity, faster operation and non-volatility. Electrical control of magnetization by the current-induced spin-orbit torque (SOT) has been intensively studied, because it can lead to low-power magnetization switching in MRAM. We have recently demonstrated efficient full SOT magnetization switching in single-layer GaMnAs films with perpendicular magnetic anisotropy (PMA). However, it still remains an unsolved problem to quantify the SOT components in the single-layer GaMnAs. Here we report the quantitative characterization of the SOT effective fields in the single-layer GaMnAs by using harmonic Hall measurement and the temperature dependence of the SOT effective fields.