[11p-N207-1~13] 3.15 Silicon photonics and integrated photonics

△ [11p-N207-5] Non-volatile operation of MOS optical phase shifter using Hf_0.5Zr_0.5O₂ FeFET

〇Kohei Watanabe¹, Kasidit Toprasertpong¹, Takagi Shinichi¹, Mitsuru Takenaka¹ (1.Tokyo Univ.)

Keywords:photonics, ferroelectric, non-volatile memory

Programmable optical circuits have been actively studied for applications such as deep learning and quantum computation, and optical phase shifters as a component of these circuits are important for further performance and functionality of programmable optical circuits. Optical phase shifters as a component of these circuits are important for further performance and functionality of programmable optical circuits. In particular, optical phase shifters with low-loss and non-volatile operation are particularly important for power reduction of optical computation by in-memory computing and crossbar interconnection of optical phase shifters.
In this study, we propose a non-volatile operation of III-V/Si hybrid MOS-type optical phase shifter with a ferroelectric transistor (FeFET) using ferroelectric Hf0.5Zr0.5O2 (HZO) as the gate dielectric. Depending on the polarization state in the ferroelectric gate dielectric film, non-volatile operation with different optical phase shifts under the same bias conditions is successfully obtained, and is reported.