[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-N304-7] Investigation of topological insulator Bi₂Se₃ epitaxial films by polarized Raman spectra

〇Tomohiro Kondo¹, Takamu Nozaki¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:topological insulator

We have grown Bi₂Se₃ on Si, Al₂O₃, and SiO₂ substrates by low-temperature growth at 120 °C, and verified the substrate dependence of van der Waals epitaxy. We also found that there is a clear correlation between depolarization ratios by polarized Raman spectra and electron mobility.