3:15 PM - 3:30 PM
[11p-N304-7] Investigation of topological insulator Bi2Se3 epitaxial films by polarized Raman spectra
Keywords:topological insulator
We have grown Bi2Se3 on Si, Al2O3, and SiO2 substrates by low-temperature growth at 120 °C, and verified the substrate dependence of van der Waals epitaxy. We also found that there is a clear correlation between depolarization ratios by polarized Raman spectra and electron mobility.