[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[11p-N305-3] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO₂ interface

〇Toru Akiyama¹, Tsunashi Shimizu¹, Tomonori Ito¹, Hiroyuki Kageshima², Kenji Shiraishi³ (1.MIe Univ., 2.Shimane Univ., 3.Nagoya Univ.)

Keywords:compounds, first-principles calculation