2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2021 » 4.6 Terahertz Photonics

[11p-N404-1~9] 4.6 Terahertz Photonics

2021年9月11日(土) 13:00 〜 16:00 N404 (口頭)

紀和 利彦(岡山大)、中嶋 誠(阪大)

13:00 〜 13:30

[11p-N404-1] Novel GaAs-Based, MBE-Grown Materials for THz Photoconductive Antenna Emitter Research at the University of the Philippines

Elmer Estacio1、Elizabeth Ann Prieto1、Alexander De Los Reyes1、Neil Irvin Cabello1、Hannah Bardolaza1、Valynn Katrine Mag-Usara2、Jessica Pauline Afalla2、Armando Somintac1、Arnel Salvador1、Hideaki Kitahara2、Masahiko Tani2 (1.NIP Univ. of the Phils.、2.FIR Center, Univ. of Fukui)

キーワード:photoconductive antenna emitter, GaAs, heterostructures

We report on the continuing efforts of the National Institute of Physics, University of the Philippines, in the design, growth, and fabrication of novel structures for THz photoconductive antennas (PCA’s) [1-3]. In particular, the talk presents recent works on the molecular beam epitaxial growth of gallium arsenide-based semiconductor trilayer films and modulation-doped heterostructures (MDH) as substrates for THz PCA emitter’s [1,2]. The improvement of these novel substrates on the performance of the emitters are primarily attributed to the surface/interface electric field modification for the trilayer design; as well as an increase in the carrier mobility for the MDH design. Additionally, work is also being undertaken on the surface modification of the PCA’s [3]. Initial results on the adsorption of Si nanowires on the PCA gap to improve THz generation will also be presented; as well recent work on the incorporation of micron-size metal line arrays on the emission side of the PCA. Being relatively large, these metal line arrays do not require electron beam lithography that are commonly employed in metamaterial enhanced PCA’s. These research activities are carried out in collaboration with the FIR Center, University of Fukui, Japan.