2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2021 » 4.6 Terahertz Photonics

[11p-N404-1~9] 4.6 Terahertz Photonics

2021年9月11日(土) 13:00 〜 16:00 N404 (口頭)

紀和 利彦(岡山大)、中嶋 誠(阪大)

15:15 〜 15:30

[11p-N404-7] Nanoscale Transistors for On-Chip Sourcing of Terahertz Plasmons

Bilal Barut1,2、Xavier Cantos-Roman3、Chun-Pui Kwan1,2、Ripudaman Dixit1、Nargess Arabchigavkani1,2、Shenchu Yin1、Jubin Nathawat1、Keke He1、Michael Randle1、Farah Vandrevala1、Takeyoshi Sugaya4、Erik Einarsson1,5、Josep Jornet3、〇Jonathan P Bird1、Gregory Aizin6 (1.Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY 14260, USA、2.Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY 14260, USA、3.Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA、4.Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 Japan、5.Department of Materials Design and Innovation, University at Buffalo, the State University of New York, Buffalo, NY 14260, USA、6.Kingsborough College, The City University of New York, NY 11235, USA)

キーワード:terahertz electronics, plasmonic sources, nanoscale transistors

Plasma oscillations in semiconductors occur at terahertz (THz) frequencies, and represent a potential path to implement ultra-fast electronic devices and circuits. Here, we present an approach to generating on-chip THz signals that relies on the stabilization of plasma waves in nanoscale transistors, designed with very specific structural asymmetry. A hydrodynamic treatment of the electron fluid in the transistors shows how their asymmetry supports the amplification of plasma waves, giving rise to pronounced negative differential conductance (NDC) once this THz plasma mode is stabilized. A proof-of-concept demonstration of this effect is provided in high-mobility In0.8Ga0.2As transistors, which exhibit NDC in accordance with their structural asymmetry. The NDC onsets once the drift velocity in the channel reaches a threshold value, triggering the initial plasma instability. It can also persist beyond room temperature (to at least 75C) when the gating is configured to maximize the instability conditions. Our findings therefore represent a significant step forward for efforts to develop active components for THz electronics.