[12a-N101-1~10] 15.4 III-V-group nitride crystals

[12a-N101-10] InGaN-based red micro-LEDs

Zhe Zhuang¹, Daisuke Iida¹, Martin Velazquez-Rizo¹, 〇Kazuhiro Ohkawa¹ (1.KAUST)

Keywords:nitride semiconductors, red LEDs, micro-LEDs

InGaN-based RGB mLEDs will be the key devices for mLED displays. We have developed InGaN-based red mLEDs. The peak wavelength showed 632-597 nm at current densities of 2-50 A/cm², respectively. FWHM was 50-52 nm at those current densities. The on-wafer EQE was 0.36%, and it was much higher than a value ever reported. Further information will be presented.