Nano-height optical/current confinement structures for GaN-based VCSELs

Minori Tanaka; Ryosuke Iida; Kaoru Oda; Tetsuro Inagaki; Kana Shibata; Tsuyoshi Nagasawa; Tetsuya Takeuchi; Motoaki Iwaya; Satoshi Kamiyama

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-N101-1~10] 15.4 III-V-group nitride crystals

Sun. Sep 12, 2021 9:00 AM - 11:45 AM N101 (Oral)

Jun Tatebayashi(Osaka Univ.), Takao Oto(Yamagata Univ.)

9:30 AM - 9:45 AM

△ [12a-N101-3] Nano-height optical/current confinement structures for GaN-based VCSELs

〇(M1)Minori Tanaka¹, Ryosuke Iida¹, Kaoru Oda¹, Tetsuro Inagaki¹, Kana Shibata¹, Tsuyoshi Nagasawa¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo Univ.)

Keywords:GaN, lateral optical confinement structure, current confinement structure

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