10:45 〜 11:00
▲ [12a-N205-7] Temperature-dependent FET properties of dibenzo[n]phenacenes (n = 5 -7)
キーワード：trap density of states, organic semiconductor
In order to quantitatively estimate the trap states generated at the interface between gate dielectrics and single crystals of dibenzo[n]phenacenes (DBnPs), as well as the channel transport, the temperature-dependent FET properties were investigated using the multiple trap and release (MTR) model.
the intrinsic mobility, μ0, of DB6P, which refers to the maximum m value without any extrinsic trap states, was evaluated to be 1.52 cm2 V-1 s-1. This value was higher than those of DB5P and DB7P, consistent with the fact that the value of μeff of DB6P was higher than those of DB5P and DB7P. The reason why DB6P is superior in both intrinsic and extrinsic aspects will be discussed in the meeting.
the intrinsic mobility, μ0, of DB6P, which refers to the maximum m value without any extrinsic trap states, was evaluated to be 1.52 cm2 V-1 s-1. This value was higher than those of DB5P and DB7P, consistent with the fact that the value of μeff of DB6P was higher than those of DB5P and DB7P. The reason why DB6P is superior in both intrinsic and extrinsic aspects will be discussed in the meeting.