Decomposition of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs

Zihao Liu; Tomoko Mizutani; Takuya Saraya; Masaharu Kobayashi; Toshiro Hiramoto

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[12a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sun. Sep 12, 2021 9:00 AM - 12:00 PM N304 (Oral)

Takashi Matsukawa(AIST)

9:00 AM - 9:15 AM

▼ [12a-N304-1] Decomposition of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs

〇(M2C)Zihao Liu¹, Tomoko Mizutani¹, Takuya Saraya¹, Masaharu Kobayashi^1,2, Toshiro Hiramoto¹ (1.IIS,Univ. of Tokyo, 2.d.lab,Univ. of Tokyo)

Keywords:nanowire, variability, decomposition

Silicon nanowire MOSFET (NWFET) is one of the most promising candidates for ultimate scaling. However, its on-current (I_on) variability has not yet been investigated. Therefore, in this study the drain current variability is analyzed and compared with traditional bulk and FDSOI MOSFETs.