[12a-N304-1~11] 13.5 デバイス／配線／集積化技術

▼ [12a-N304-1] Decomposition of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs

〇(M2C)Zihao Liu¹、Tomoko Mizutani¹、Takuya Saraya¹、Masaharu Kobayashi^1,2、Toshiro Hiramoto¹ (1.IIS,Univ. of Tokyo、2.d.lab,Univ. of Tokyo)

キーワード：nanowire, variability, decomposition

Silicon nanowire MOSFET (NWFET) is one of the most promising candidates for ultimate scaling. However, its on-current (I_on) variability has not yet been investigated. Therefore, in this study the drain current variability is analyzed and compared with traditional bulk and FDSOI MOSFETs.