[12a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

▼ [12a-N304-10] Evaluation of ZnO:Ga nanoparticle-based thin-film-transistors

〇(DC)MD MARUFUL ISLAM¹, Yoshida Toshiyuki¹, Fujita Yasuhisa¹ (1.Shimane Univ.)

Keywords:Ga doped ZnO TFT, MESFET, MISFET

Zinc oxide, a third-generation semiconductor material with a wide and direct band gap, has received considerable attention due to its excellent optical and electrical properties. The band gap of 3.37eV and a relatively higher exciton binding energy of 60meV. In our previous study, the dramatic improvements of current transportation ability of ZnO-NP based Schottky-gate TFTs by using a unique thermal diffusion type Ga-doping process was presented. This study represents the comparison of ZnO MESFET and MISFET properties with a low resistive n-channel layer.
Previous analyses indicate that the resistance value falls from the order of MW/sq to sub-kW/sq by thermal treatment with Ga₂O₃ NPs and Ga incorporated into ZnO-NPs with substituting for Zn; i.e. Ga-doping was achieved effectively. The MIS-gate-type TFTs on Si/SiO₂ substrates showed an improved transconductance (g_m=1.9µS) compared with MES-gate-type TFTs on quartz substrates (g_m=0.6µS).