11:30 〜 11:45
▼ [12a-N304-10] Evaluation of ZnO:Ga nanoparticle-based thin-film-transistors
キーワード：Ga doped ZnO TFT, MESFET, MISFET
Zinc oxide, a third-generation semiconductor material with a wide and direct band gap, has received considerable attention due to its excellent optical and electrical properties. The band gap of 3.37eV and a relatively higher exciton binding energy of 60meV. In our previous study, the dramatic improvements of current transportation ability of ZnO-NP based Schottky-gate TFTs by using a unique thermal diffusion type Ga-doping process was presented. This study represents the comparison of ZnO MESFET and MISFET properties with a low resistive n-channel layer.
Previous analyses indicate that the resistance value falls from the order of MW/sq to sub-kW/sq by thermal treatment with Ga2O3 NPs and Ga incorporated into ZnO-NPs with substituting for Zn; i.e. Ga-doping was achieved effectively. The MIS-gate-type TFTs on Si/SiO2 substrates showed an improved transconductance (gm=1.9µS) compared with MES-gate-type TFTs on quartz substrates (gm=0.6µS).
Previous analyses indicate that the resistance value falls from the order of MW/sq to sub-kW/sq by thermal treatment with Ga2O3 NPs and Ga incorporated into ZnO-NPs with substituting for Zn; i.e. Ga-doping was achieved effectively. The MIS-gate-type TFTs on Si/SiO2 substrates showed an improved transconductance (gm=1.9µS) compared with MES-gate-type TFTs on quartz substrates (gm=0.6µS).