[12a-N304-1~11] 13.5 デバイス／配線／集積化技術

▲ [12a-N304-4] Introduction of high tensile strain into Ge-on-Insulator structures by oxidation/annealing at high temperature

〇Xueyang Han¹、ChiaTsong Chen¹、Cheol-Min Lim¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. Tokyo)

キーワード：semiconductor, GOI, tensile strain

An additional high temperature (HT) thermal process at 850 ^oC is proved to generate high tensile strain of ~0.56 % at maximum into Ge-on-Insulator (GOI) structures fabricated by Ge condensation. The impact of oxidation/annealing conditions on tensile strain, surface roughness in the GOI structures are systematically studied. The importance of initial oxidation is addressed. The physical origin of observed tensile strain is discussed in terms of thermal expansion coefficient.