2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

13 半導体 » 13.5 デバイス/配線/集積化技術

[12a-N304-1~11] 13.5 デバイス/配線/集積化技術

2021年9月12日(日) 09:00 〜 12:00 N304 (口頭)

松川 貴(産総研)

10:45 〜 11:00

[12a-N304-7] Hole mobility enhancement in extremely-thin body asymmetrically-strained (100) GOI pMOSFETs

〇(DC)CHIATSONG CHEN1、Ryo Yokogawa2,3、Kasidit Toprasertpong1、Atsushi Ogura2,3、Mitsuru Takenaka1、Shinichi Takagi1 (1.Univ. of Tokyo、2.Meiji Univ.、3.MREL)

キーワード:GOI, extremely-thin body, asymmetric strain

We demonstrate high performance asymmetric strain (100) Ge-on-insulator (GOI) pFETs with body thickness (Tbody) ranging from 10.6 to 3.8 nm by combining Ge condensation with channel width narrowing. Thanks to asymmetric strain, effective hole mobility (μeff) of 312 cm2/Vs is achieved on 3.8-nm-thick GOI, leading to 2.4x mobility enhancement against biaxial strain. The effectiveness of asymmetric strain on extremely-thin channels is confirmed even in Tbody less than 5 nm.