[12a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

▲ [12a-N304-8] Asymmetrically-strained (110) SGOI pMOSFETs for hole mobility enhancement in extremely-thin body channels

〇(DC)CHIATSONG CHEN¹, Ryo Yokogawa^2,3, Kasidit Toprasertpong¹, Atsushi Ogura^2,3, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo, 2.Meiji Univ., 3.MREL)

Keywords:SGOI, extremely-thin body, asymmetric strain

We demonstrate high performance asymmetric strain (110) SiGe-on-insulator (SGOI) pFETs with body thickness (T_body) down to 6.4 nm by combining Ge condensation with channel width narrowing. Thanks to asymmetric strain, effective hole mobility (μ_eff) of 807 cm²/Vs is achieved on 6.4-nm-thick SGOI, leading to 2x mobility enhancement against biaxial strain.