[12a-N304-1~11] 13.5 デバイス／配線／集積化技術

▲ [12a-N304-8] Asymmetrically-strained (110) SGOI pMOSFETs for hole mobility enhancement in extremely-thin body channels

〇(DC)CHIATSONG CHEN¹、Ryo Yokogawa^2,3、Kasidit Toprasertpong¹、Atsushi Ogura^2,3、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo、2.Meiji Univ.、3.MREL)

キーワード：SGOI, extremely-thin body, asymmetric strain

We demonstrate high performance asymmetric strain (110) SiGe-on-insulator (SGOI) pFETs with body thickness (T_body) down to 6.4 nm by combining Ge condensation with channel width narrowing. Thanks to asymmetric strain, effective hole mobility (μ_eff) of 807 cm²/Vs is achieved on 6.4-nm-thick SGOI, leading to 2x mobility enhancement against biaxial strain.