[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[12a-N305-4] Transient internal temperature measurement of SiC-Schottky Barrier Diode using Optical-Interference Contactless Thermometry (OICT)

〇Keiya Fujimoto¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:SiC, OICT

As the device becomes smaller and has higher performance, the temperature rise due to self-heating becomes more serious, leading to deterioration of performance and life. However, the conventional measurement method is to measure the transient temperature change inside the device. We have been developing an Optical-Interference Contactless Thermometry (OICT) that utilizes the interference of light transmitted through the inside of the wafer. In this study, we applied it to visualize the internal thermal diffusion process during operation of the SiC-Schottky Barrier Diode (SBD).