[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[12a-N305-8] Optically detected magnetic resonance spectra of silicon vacancies in 4H-SiC with different temperatures

〇(M1)Shu Motoki^1,2, Shinichiro Sato², Yuta Masuyama², Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

Keywords:silicon vacancy, optically detected magnetic resonance, magnetic sensor

Silicon vacancy (V_Si^-) centers in silicon carbide are expected to be used for magnetic sensors under harsh environments. However, change with temperatures in optically detected magnetic resonance (ODMR) in the ground state of V_Si^- centers, which is the basic principle of magnetic sensing, is less well understood. Here we report the change in ODMR spectra of V_Si^- centers with different temperatures. We find that the contrast of ODMR spectrum appeared at 70 MHz decreases as the temperature increases, while the full width at half maximum increases. In the presentation, we will discuss the mechanism of the results and also report the effects on V_Si^- concentrations.