[12a-N307-1~11] 17.3 Layered materials

[12a-N307-2] Resonant tunneling effect in 4 layer WSe₂/h-BN double quantum wells

〇Kei Kinoshita¹, Rai Moriya¹, Shota Okazaki², Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe³, Takashi Taniguchi^3,1, Takao Sasagawa², Tomoki Machida^1,4 (1.IIS Univ. Tokyo, 2.MSL Tokyo Tech., 3.NIMS, 4.CREST-JST)

Keywords:TMD, resonant tunneling, subband

Few-layer WSe₂ exhibit subband quantization due to out-of-plane wave function confinement. In this study, we fabricated 4 layer WSe₂/h-BN tunnel barrier/4 layer WSe₂ tunnel junction device. The I-V characteristics showed resonant tunneling effect and negative differential resistance, and the maximum peak-to-valley ratio was 5.3 at 60 K. This effect was observed at room temperature. In the presentation, we will discuss about the result under in-plane magnetic field to distinguish whether the origin of tunneling transport was Γ or K point in momentum space.