[12a-N307-1~11] 17.3 層状物質

▼ [12a-N307-6] Current injection into single-crystalline carbon-doped h-BN

〇Supawan Ngamprapawat¹、Takashi Taniguchi²、Kenji Watanabe²、Tomonori Nishimura¹、Kosuke Nagashio¹ (1.Univ. Tokyo、2.NIMS)

キーワード：Hexagonal boron nitride, Current injection, Carbon-doped h-BN

Hexagonal boron nitride (h-BN) is widely known as an ideal substrate and/or dielectric layer in 2D research field for its insulating nature. In addition to this application, h-BN has been proposed as a promising material for the deep-ultraviolet optoelectronic devices and the photostable single-photon emitters. Besides, due to its intriguing properties, especially high breakdown field and high thermal conductivity and stability, h-BN is also a potential candidate for the next-generation energy-efficient power device that will fulfill the 2D-electronic platform. Nevertheless, to date, the major limitation in developing these devices based on high-quality single-crystalline h-BN is the current injection.
Here, we report the in-plane current injection into single-crystalline carbon-doped h-BN synthesized under high-pressure and high-temperature (HPHT). Our findings will make a significant step towards the realization of the single-crystalline h-BN based electronic-optoelectronic devices.