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[12a-N323-4] Anticorrosive behavior of SiCxNyOz thin film produced by room temperature PECVD
Keywords:plasma CVD, SiCNO
Since the SiCxNyOz thin film exhibits chemical resistance due to SiOx, SiC, and SiNx, it is expected that it can be applied as a protective film. So far, when an amorphous SiCxNyOz film is formed using nitrogen (N2) and monomethylsilane (SiH3CH3, MMS) in room temperature Ar plasma, the composition can be quantitatively predicted by the partial pressure and current value of the raw material gas. , Increased nitrogen concentration
It has been reported that the corrosion resistance is reduced by [1-3].
In this study, we observed the corrosion resistance obtained when exposed to chlorine trifluoride (ClF3) gas, and discussed the relationship between its behavior and composition, and report the details.
It has been reported that the corrosion resistance is reduced by [1-3].
In this study, we observed the corrosion resistance obtained when exposed to chlorine trifluoride (ClF3) gas, and discussed the relationship between its behavior and composition, and report the details.