[12a-N403-1~7] 11.4 Analog applications and their related technologies

[12a-N403-2] Preparation of Nb₃Ge superconducting thin films with radiation heating 2

〇Akira Kawakami¹, Hirotaka Terai¹, Yoshinori Uzawa² (1.NICT, 2.NROJ)

Keywords:SIS mixer, Nb3Ge, THz

To realize a 1.5 THz band SIS mixer, we are studying the deposition method of the Nb₃Ge thin film, which is an A15 type superconducting material. The multiple simultaneous sputtering method was used as the film deposition system. For the purpose of increasing the area of the substrate, we tried the radiant heating method, which heats the substrate without contact with the heater, directly. We succeeded in forming an Nb₃Ge thin film with a superconducting transition temperature of 17.2 K and a resistivity of 58.9 μΩ cm on a 2-inch sapphire substrate.