[12a-S201-1~9] Next generation luminescent materials for optical devices

△ [12a-S201-3] Precise control of emission wavelength and high photoluminescence quantum yield of perovskite quantum dots by crystal lattice distortion

〇(D)Ryota Sato¹, Rikuo Suzuki², Yusaku Morikawa³, Satoshi Asakura^1,4, Takayuki Chiba^2,5, Akito Masuhara^1,5 (1.Grad. Sch. of Sci. and Eng., Yamagata Univ., 2.Grad. Sch. of Org. Mat. Sci., Yamagata Univ., 3.Fac. of Eng., Yamagata Univ., 4.Ise Chem. Corp., 5.FROM, Yamagata Univ.)

Keywords:Perovskite quantum dots, Crystal lattice distortion, Energy band gap

ABX₃ perovskite quantum dots (PeQDs) have attracted attention as a next-generation light emitting diode (LED). However, compatibility of precise control of emission wavelength (λ_PL) and high photoluminescence quantum yield (PLQY) of PeQDs could not be achieved and resulting in issues that are still difficult to apply to LED devices for BT.2020.
In this work, A site mixed PeQDs (= FA_xMA_1-xPbBr₃, FA: NH=CH₂NH₃⁺, MA: CH₃NH₃⁺) with 1 nm order control of λ_PL and high PLQY were successfully prepared by the unification of mixture of A site which is not directly affected to emission. In detail, due to the (100)-phase lattice distance of FA_xMA_1-xPbBr₃ was a little shorter as increasing the ratio of MA, precise control of the energy band gap of FA_xMA_1-xPbBr₃ was succeeded. As a result, the controlling λ_PL of 1 nm order was succeeded. Furthermore, FA_xMA_1-xPbBr₃ were successfully kept the high PLQY due to the no occurrence of different σ-σ* transitions.