The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[12a-S203-1~9] 6.3 Oxide electronics

Sun. Sep 12, 2021 9:00 AM - 11:30 AM S203 (Oral)

Hiroyuki Yamada(AIST)

11:15 AM - 11:30 AM

[12a-S203-9] Solid-state electrochemical redox control of
the optoelectronic properties for SrFeOx thin films

〇(DC)Qian Yang1, Haijun Cho2, Hyoungjeen Jeen3, Hiromichi Ohta2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Pusan Nat'l Univ.)

Keywords:Oxide electronics

By utilizing redox reactions, the physical properties of several transition metal oxides can be drastically changed, which is useful for developing multifunctional memory devices. Strontium iron oxide (SrFeOx), which exhibits a clear phase transition from antiferromagnetic insulator (x = 2.5) to helimagnetic metal (x = 3), is a good candidate for the active material in multifunctional memory devices. However, practical applications using previous demonstrations of redox reactions in SrFeOx are limited by the use of a liquid electrolyte due to the leakage problem. In our previous study, we successfully realized the electrochemical oxidation reaction of SrCoOx by using yttria-stabilized zirconia (YSZ) as the solid-state electrolyte. Here, we fabricated SrFeOx epitaxial films on YSZ single crystal substrate and performed electrochemical redox reaction. The present results would provide a design concept for future SrFeOx-based solid-state device.