[12a-S203-1~9] 6.3 Oxide electronics

▼ [12a-S203-9] Solid-state electrochemical redox control of
the optoelectronic properties for SrFeO_x thin films

〇(DC)Qian Yang¹, Haijun Cho², Hyoungjeen Jeen³, Hiromichi Ohta² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Pusan Nat'l Univ.)

Keywords:Oxide electronics

By utilizing redox reactions, the physical properties of several transition metal oxides can be drastically changed, which is useful for developing multifunctional memory devices. Strontium iron oxide (SrFeO_x), which exhibits a clear phase transition from antiferromagnetic insulator (x = 2.5) to helimagnetic metal (x = 3), is a good candidate for the active material in multifunctional memory devices. However, practical applications using previous demonstrations of redox reactions in SrFeO_x are limited by the use of a liquid electrolyte due to the leakage problem. In our previous study, we successfully realized the electrochemical oxidation reaction of SrCoO_x by using yttria-stabilized zirconia (YSZ) as the solid-state electrolyte. Here, we fabricated SrFeO_x epitaxial films on YSZ single crystal substrate and performed electrochemical redox reaction. The present results would provide a design concept for future SrFeO_x-based solid-state device.