[12a-S301-1~11] 6.2 カーボン系薄膜

▼ [12a-S301-10] Optical Detected Magnetic Resonance of Nitrogen-Vacancy Centers Generated by Ion-Implantation in Vertical Diamond Schottky Diode

〇(D)MuhammadHafiz bin AbuBakar¹、Aboulaye Traore¹、Junjie Guo¹、Toshiharu Makino²、Masahiko Ogura²、Satoshi Yamasaki²、Takeaki Sakurai¹ (1.Uni. of Tsukuba、2.AIST)

キーワード：NV center

In this work, we reported an active electrical control of nitrogen-vacancy (NV) centers charge and spin state by a vertical diamond Schottky diodes (VDSD). The photoluminescence (PL) and Optical Detected Magnetic Resonance (ODMR) of NV centers generated by ion-implantation in the VDSDs are discussed. By applying a reverse voltage across VDSDs, the NV⁰ is converted into NV^- charge state because of the band bending in the depletion layer. Thus, the voltage dependence of the PL exhibits an increased intensity of NV^- zero phonon line (ZPL) with the applied voltage whereas the intensity of NV⁰ ZPL decreases. Moreover, the NV^- phonon sideband increases with the applied voltage. On the other hand, the resonance dip of the NV^- ODMR spectrum splits for applied reverse voltage higher than 10 V. The dips splitting width increases with the applied voltage, and so, with the electric field magnitude within the VDSDs. Such dips splitting results from the Stark effect.