The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[12a-S302-1~7] 10.3 Spin devices, magnetic memories and storages

Sun. Sep 12, 2021 9:00 AM - 10:45 AM S302 (Oral)

Itoh Keita(東北大)

9:00 AM - 9:15 AM

[12a-S302-1] Large impact of spin-scattering asymmetry at Co2Fe0.4Mn0.6Si/CoFe ferromagnetic interface on current-perpendicular-to-plane giant magnetoresistance

Yuichi Fujita1, Yoshio Miura1, Taisuke Sasaki1, Tomoya Nakatani1, Kazuhiro Hono1, Yuya Sakuraba1 (1.NIMS)

Keywords:spintronics, giant magnetoresistance, Heusler alloy

In this study, we show direct evidence for interface spin-scattering asymmetry (γ) at half metallic ferromagnet/ferromagnet interface based on a half metallic Co2Fe0.4Mn0.6Si (CFMS)/CoFe interface. Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin-valve (PSV) devices involving CoFe/CFMS/Ag/CFMS/CoFe structures exhibit an enhancement in resistance change-area product owing to the formation of the CFMS/CoFe interface at room temperature. This is well reproduced qualitatively by a simulation based on the generalized two-current series-resistor model with considering the presence of large γ at the CFMS/CoFe interface in the CPP-GMR PSV structure. We also discuss the results of the first-principles ballistic transport calculations for (001)-CoFe/CFMS/CoFe, which indicate strong spin-dependent conductance at the CFMS/CoFe interface, suggesting large γ.