The 82nd JSAP Autumn Meeting 2021

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12a-S302-8~11] 10.4 Semiconductor spintronics, superconductor, multiferroics

Sun. Sep 12, 2021 11:00 AM - 12:00 PM S302 (Oral)

DUC ANh LE(Univ. of Tokyo)

11:45 AM - 12:00 PM

[12a-S302-11] Intravalley Scattering Probed by Excitation Energy Dependence of Valley Polarization in Monolayer MoS2

〇(M1)Takeshi Odagawa1, Eito Asakura1, Masaki Suzuki1, Shutaro Karube1,2, Junsaku Nitta1,2,3, Makoto Kohda1,2,3,4 (1.Dept. of Mat. Sci., Tohoku Univ., 2.CSRN, Tohoku Univ., 3.CSIS, Tohoku Univ., 4.FRiD, Tohoku Univ.)

Keywords:Transition-metal dichalcogenides, Intravalley scattering, Valley polarization

Monolayer transition-metal dichalcogenides (ML-TMDCs) show strong enhancement of the Coulomb interaction and the spin-orbit coupling, as well as the emergence of the valley degree of freedom (VDoF). The utilization of VDoF as a spin-like quantum number requires deep understanding of the valley depolarization. Here, we reveal the mechanism of the intravalley scattering from B- to A-exciton in ML-MoS2 via photoluminescence spectroscopy, and show the universality of its mechanism within ML-TMDCs. The steady-state valley polarization can be a sensitive probe for the intravalley scattering, which accelarates research on the valley scattering.