2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.4 半導体スピントロニクス・超伝導・強相関

[12a-S302-8~11] 10.4 半導体スピントロニクス・超伝導・強相関

2021年9月12日(日) 11:00 〜 12:00 S302 (口頭)

レ デゥック アイン(東大)

11:45 〜 12:00

[12a-S302-11] Intravalley Scattering Probed by Excitation Energy Dependence of Valley Polarization in Monolayer MoS2

〇(M1)Takeshi Odagawa1、Eito Asakura1、Masaki Suzuki1、Shutaro Karube1,2、Junsaku Nitta1,2,3、Makoto Kohda1,2,3,4 (1.Dept. of Mat. Sci., Tohoku Univ.、2.CSRN, Tohoku Univ.、3.CSIS, Tohoku Univ.、4.FRiD, Tohoku Univ.)

キーワード:Transition-metal dichalcogenides, Intravalley scattering, Valley polarization

Monolayer transition-metal dichalcogenides (ML-TMDCs) show strong enhancement of the Coulomb interaction and the spin-orbit coupling, as well as the emergence of the valley degree of freedom (VDoF). The utilization of VDoF as a spin-like quantum number requires deep understanding of the valley depolarization. Here, we reveal the mechanism of the intravalley scattering from B- to A-exciton in ML-MoS2 via photoluminescence spectroscopy, and show the universality of its mechanism within ML-TMDCs. The steady-state valley polarization can be a sensitive probe for the intravalley scattering, which accelarates research on the valley scattering.