[12p-N101-1~20] 15.4 III-V-group nitride crystals

[12p-N101-1] Growth condition dependence of GaN thin film crystallinity prepared by liquid phase epitaxy under an atmospheric pressure nitrogen ambience

〇(M2)Masataka Katsuumi¹, Tetsuya Akasaka¹ (1.Meisei Univ.)

Keywords:gallium nitride, atmospheric pressure, liquid phase epitaxy

Recently, liquid phase epitaxy employed under an atmospheric pressure nitrogen ambience (AP-LPE) has been proposed in order to obtain high-quality GaN single-crystals with low defect densities. AP-LPE uses liquid gallium and iron nitride (Fe₃N) as sources and is expected to be one of the novel growth methods to reduce the production cost for GaN bulk substrates. We have investigated surface morphology and crystallinity of GaN films obtained by AP-LPE method by changing various growth parameters such as gallium/Fe₃N ratio and growth temperature