Reduction of dislocation density of Al<sub>0.6</sub>Ga<sub>0.4</sub>N film on sputtered AlN template and application to UV-B LD

Moe Shimokawa; Tomoya Omori; Yamada Kazuki; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satohsi Kamiyama; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-N101-1~20] 15.4 III-V-group nitride crystals

Sun. Sep 12, 2021 1:00 PM - 6:30 PM N101 (Oral)

Kazunobu Kojima(Tohoku Univ.), Shugo Nitta(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

5:45 PM - 6:00 PM

[12p-N101-18] Reduction of dislocation density of Al_0.6Ga_0.4N film on sputtered AlN template and application to UV-B LD

〇(M2)Moe Shimokawa¹, Tomoya Omori¹, Yamada Kazuki¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satohsi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN

« Previous in this session
Next in this session »

▲

Presentation information

[12p-N101-1~20] 15.4 III-V-group nitride crystals

[12p-N101-18] Reduction of dislocation density of Al0.6Ga0.4N film on sputtered AlN template and application to UV-B LD

[12p-N101-18] Reduction of dislocation density of Al_0.6Ga_0.4N film on sputtered AlN template and application to UV-B LD