[12p-N101-1~20] 15.4 III-V-group nitride crystals

△ [12p-N101-19] Effect of Mg doping on EBL and Al composition graded AlGaN cladding layer of UV-B LD

〇(M2)Kazuki Yamada¹, Tomoya Omori¹, Moe Shimokawa¹, Ayumu Yabutani¹, Ryota Hasegawa¹, Sho Iwayama^2,1, Hideto Miyake², Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Fac. Sci. &Tech., Meijo Univ., 2.Grad. Sch. of Reg. Innov. Stu., Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN