[12p-N101-1~20] 15.4 III-V-group nitride crystals

[12p-N101-2] Bulk GaN crystal growth by Low-Pressure Acidic Ammonothermal (LPAAT) method using high quality GaN SCAAT^TM seed crystals

〇kouhei kurimoto¹, quanxi bao¹, yutaka mikawa², daisuke tomida³, kohei shima³, kazunobu kojima³, toru ishiguro³, shigefusa chichibu³ (1.Japan Steel Works, 2.Mitsubishi Chemical corp., 3.IMRAM-Tohoku Univ.)

Keywords:gallium nitride(GaN), Ammonothermal method, Bulk crystal

The acid ammonothermal method is expected as one of mass production methods for large diameter bulk GaN crystals.we report our latest progresses on the GaN crystal growth technology called Low-Pressure Acidic Ammonothermal method (LPAAT method). In this talk, we will report on the quality of crystals grown by the LPAAT method using high-quality SCAAT ™ seeds.