[12p-N101-1~20] 15.4 III-V-group nitride crystals

[12p-N101-3] Low pressure acidic ammonothermal growth of GaN crystals using mixed mineralizer

〇Daisuke Tomida¹, Saskia Schimmel¹, Makoto Saito^2,3, Quanxi Bao^2,4, Tohru Ishiguro², Yoshio Honda¹, Sigefusa Chichibu², Hiroshi Amano¹ (1.IMaSS-Nagoya Univ., 2.IMRAM-Tohoku Univ., 3.Mitsubishi Chemical Corp., 4.Japan Steel Works)

Keywords:gallium nitride, ammonothermal method, bulk crystal

It is known that in the ammonothermal growth of GaN crystals, the temperature dependence of solubility, crystal growth rate, and crystal quality change greatly depending on the type of mineralizer. The mixed mineralizer is an important method capable of controlling the crystal growth rate and the crystal growth direction by changing the combination and composition of the mineralizer. In this talk, we will report the results of growing GaN crystals by the low pressure acidic ammonothermal method using a mixed mineralizer.